| PART |
Description |
Maker |
| IXXH60N65C4 |
Preliminary Technical Information
|
IXYS Corporation
|
| IXBH32N300 |
Preliminary Technical Information
|
IXYS Corporation
|
| IXXH75N60C3 |
Preliminary Technical Information
|
IXYS Corporation
|
| IXYK100N120B3 |
Preliminary Technical Information
|
IXYS Corporation
|
| IXTL2N450 |
Preliminary Technical Information
|
IXYS Corporation
|
| IXTP160N075T IXTA160N075T |
Preliminary Technical Information TrenchMVTM Power MOSFET
|
IXYS Corporation
|
| IXGQ90N27PB |
Preliminary Technical Information PolarTM IGBT for PDP Applications
|
IXYS Corporation
|
| IXTA90N15T IXTH90N15T |
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode
|
IXYS Corporation
|
| AD8651 AD8651AR AD8651ARM AD8651ARM-R2 AD8651AR-RE |
50 MHz, Precision, Low Distortion, Low Noise CMOS Amplifiers Preliminary Technical Data
|
AD[Analog Devices]
|
| IXTQ160N10T IXTH160N10T |
Preliminary Technical Information TrenchMVTM Power MOSFET
160 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS Corporation
|
| HM10G002 |
256/263CH TFT-LCD GATE DRIVER SPECIFICATION PRELIMINARY PRELIMINARY
|
HYNIX[Hynix Semiconductor]
|
| IXFX120N65X2 |
Preliminary Technical Information
|
IXYS Corporation
|
